NVMe M.2 PCIe Gen3x4 Solid State Drive
High-quality 3D NAND Flash memory chip.
PCIe Gen3.0x4. Data transmission speed up to 5000 MB/s.
NVMe1.4 protocol.
4K LDPC.
Reliable and fast end-to-end data.
Hurry and get discounts on all Apple devices up to 20%
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Original price was: KSh 5,500.00.KSh 4,000.00Current price is: KSh 4,000.00. Excl. VAT
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| Product Model | DHI-SSD-C900N512G |
| Capacity1 | 512 GB |
| Form Factor | M.2 NVME |
| Port | PCIe Gen 3.0 x 4 |
| Net Weight | Max 8 g (0.02 lb) |
| Product Dimensions2 | 80.0 mm × 23.0 mm × 4.8 mm (3.15″ × 0.91″ × 0.19″) |
| Packaging Dimensions | 140.5 mm × 105.5 mm × 15.5 mm (5.53″ × 4.15″ × 0.61″) |
| Memory Component | 3D TLC |
| Power Consumption2 | 2848 mW (max) |
| 528 mW (idle) | |
| S.M.A.R.T | Support |
| TRIM | Support |
| Garbage Collection | Support |
| Sequential Read2 | Up to 2000 MB/s |
| Sequential Write2 | Up to 1450 MB/s |
| 4K Random Read2 | Up to 160000 |
| 4K Random Write2 | Up to 200000 |
| MTBF | 1,500,000 hours |
| Operating Temperature | 0°C to 70°C (32°F to 158°F) |
| Storage Temperature | –40°C to 85°C (–40°F to 185°F) |
| Operating Humidity | 5%–95% (non-condensing) |
| Vibration Resistance | 7–800 Hz, 3.08 G |
| Shock Resistance | 1500 G/0.5 ms (half sine wave) |
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